| 发明名称 |
METHOD FOR DETERMINATION OF THIOCKNESS OF SURFACE MICRO-DEFECT LAYER ON SILICON PLATES |
| 摘要 |
Method for determination of thickness of surface micro-defect layer of silicon plates relates to technology for production of semiconductor devices. The utility model can be used at enterprises of micro-electronics profile for contact-less and non-destructive control of thickness of surface micro-relief layer on silicon plates used for production of semiconductor devices. |
| 申请公布号 |
UA48502(U) |
申请公布日期 |
2010.03.25 |
| 申请号 |
UA20090008343U |
申请日期 |
2009.08.07 |
| 申请人 |
TARAS SHEVCHENKO KYIV NATIONAL UNIVERSITY |
发明人 |
LYSOCHENKO SERHII VASYLIOVYCH;YEREMENKO VADYM OLEKSIIOVYCH;ZHARKYKH YURII SERAFYMOVYCH;KARPLIUK OLEKSANDR IVANOVYCH;PRYMACHENKO IVAN ANDRIIOVYCH;TRETIAK OLEH VASYLIOVYCH |
| 分类号 |
G01B11/30 |
主分类号 |
G01B11/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
