发明名称 |
FIN FIELD EFFECT TRANSISTOR (FINFET) |
摘要 |
<p>A Fin FET whose fin (12) has an upper portion (30) doped with a first conductivity type and a lower portion (32) doped with a second conductivity type, wherein the junction (34) between the upper portion (30) and the lower portion (32) acts as a diode; and the FinFET further comprises: at least one layer (26, 28) of high-k dielectric material (for example Si3 N4 ) adjacent at least one side of the fin (12) for redistributing a potential drop more evenly over the diode, compared to if the at least one layer of high-k dielectric material were not present, when the upper portion (30) is connected to a first potential and the lower portion (32) is connected to a second potential thereby providing the potential drop across the junction (34). Examples of the k value for the high-k dielectric material are k = 5, k = 7.5, and k = 20.</p> |
申请公布号 |
WO2010032174(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
WO2009IB53963 |
申请日期 |
2009.09.10 |
申请人 |
NXP B.V.;DOORNBOS, GERBEN;LANDER, ROBERT |
发明人 |
DOORNBOS, GERBEN;LANDER, ROBERT |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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