| 摘要 |
A method for manufacturing a semiconductor storage device comprising a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode, which comprises a step of embedding a first metal plug and a second metal plug in an insulating layer, a step of forming a covering layer which covers at least the second metal plug, while securing a portion for electrical contact with the first metal plug, a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film and a material for the upper electrode after the formation of the covering layer, and a step of forming the ferroelectric capacitor by removing portions of the deposit structure other than a part by etching in such a manner that the part of the deposit structure remains on the first metal plug. |
