| 摘要 |
A Least Significant Bit (LSB) page recovery method used in a multi-level cell (MLC) flash memory device is provided. The method includes setting first through nth LSB page groups (n being a natural number that is larger than 2) comprising at least two LSB pages from among the LSB pages included in the MLC flash memory, programming the first through xth LSB pages (x is a natural number that is larger than 2) included in an ith LSB page group (i is a natural number that is smaller than n), generating and storing an ith LSB parity page for the first through xth LSB pages, programming first through xth MSB pages which correspond to one LSB page from among the first through xth LSB pages, and recovering a jth LSB page, which are paired with a jth MSB page, using the ith LSB parity page corresponding to the ith LSB page group, when a power supply to the MLC flash memory is stopped during the programming of the jth MSB page (j is a natural number that is smaller than x).
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