发明名称 UNIDIRECTIONAL METAL OXIDE FILM SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND APPLICATIONS THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a unidirectional metal oxide film semiconductor field effect transistor, and to provide applications of the transistor. SOLUTION: The unidirectional metal oxide film semiconductor field effect transistor (UMOS) provided includes a metal oxide film semiconductor field effect transistor (MOS), a current detection circuit, and a fast turn-off circuit. The current detection circuit detects the direction of a current that flows through the MOS. When a forward current is detected, the fast turn-off circuit is deactivated, and the channel of the MOS is established; when a reverse current is detected, since the fast turn-off is effectively activated, channel of the MOS is not formed. The UMOS can be applied to a synchronous rectifier (not necessarily limited to synchronous rectifiers) and detect reverse current or shoot-through current, and fast turn-off the channel of the MOS can be fast turned off. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010067985(A) 申请公布日期 2010.03.25
申请号 JP20090210421 申请日期 2009.09.11
申请人 GLACIALTECH INC;WANG CHIH-LIANG 发明人 WANG CHIH-LIANG;YU CHING-SHENG;WONG PO-TAI
分类号 H01L21/8234;H01L21/822;H01L27/04;H01L27/06;H01L27/088;H02M3/28 主分类号 H01L21/8234
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