发明名称 MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS
摘要 Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
申请公布号 US2010072042(A1) 申请公布日期 2010.03.25
申请号 US20090511779 申请日期 2009.07.29
申请人 发明人 BERTIN CLAUDE L.;HUANG X. M. H.;RUECKES THOMAS;SIVARAJAN RAMESH
分类号 H01H59/00;H01H36/00 主分类号 H01H59/00
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