INTEGRATED CIRCUIT OF COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS)

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit of a CMOS for preventing the breakdown of internal elements of the integrated circuit by triggering a switching operation at the timing of a voltage change of a node which generates a voltage change almost equal to that in a power source line when a static electricity surge is applied to the power source line. SOLUTION: A static electricity breakdown preventing discharge circuit 300 includes an NMOSFET Qe (310) and couples a gate terminal node Vgp (222) connected to a gate of PDMOS transistor Qo (110) for output and a gate of the NMOSFET Qe (310) for discharge via a capacitor Ce (320) to further connect a drain of the NMOSFET Qe (310) for discharge to the gate terminal node Vgp (222) connected to the gate of PDMOS transistor Qo (110) for output. In addition, a pull-down resistor Re (330) is provided between the gate and the ground of the NMOSFET Qe (310) for discharge so that the NMOSFET Qe (310) for discharge is not operated in a steady state. COPYRIGHT: (C)2010,JPO&INPIT