| 摘要 |
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.
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