发明名称 Fabrication method of semiconductor integrated circuit device
摘要 A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.
申请公布号 US7681308(B2) 申请公布日期 2010.03.23
申请号 US20080118348 申请日期 2008.05.09
申请人 RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.;RENESAS TECHNOLOGY CORPORATION 发明人 KURATOMI BUNSHI;SHIMIZU FUKUMI
分类号 B29C45/34;H05K3/30;B29L31/34;H01L21/44;H01L21/56;H01L21/98;H01L23/31;H01L25/065 主分类号 B29C45/34
代理机构 代理人
主权项
地址