发明名称 Method for reducing pillar structure dimensions of a semiconductor device
摘要 A method creates pillar structures on a semiconductor wafer and includes the steps of providing a layer of semiconductor. A layer of photoresist is applied over the layer of semiconductor. The layer of photoresist is exposed with an initial pattern of light to effect the layer of photoresist. The photoresist layer is then etched away to provide a photoresist pattern to create the pillar structures. The photoresist pattern is processed in the layer of photoresist after the step of exposing the layer of photoresist and prior to the step of etching to reduce the dimensions of the photoresist pattern in the layer of photoresist.
申请公布号 US7682942(B2) 申请公布日期 2010.03.23
申请号 US20070864205 申请日期 2007.09.28
申请人 SANDISK 3D LLC 发明人 CHEN YUNG-TIN;CHAN MICHAEL;POON PAUL;RADIGAN STEVEN J.
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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