发明名称 |
Horizontal chalcogenide element defined by a pad for use in solid-state memories |
摘要 |
A memory cell structure includes a substrate having a bottom electrode at least partially disposed within the substrate; a pad disposed at least partially over the substrate; a phase change element having a chalcogenide material, disposed at least partially over the substrate and adjacent to the pad, the phase change element being adjacent and operatively coupled to the bottom electrode; and a top electrode operatively coupled to the phase change element. Moreover, the pad is formed by a method including depositing a first material layer over the substrate, etching the first material layer to form a pad strip and to expose the bottom electrode, and etching the pad strip to from the pad.
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申请公布号 |
US7683360(B2) |
申请公布日期 |
2010.03.23 |
申请号 |
US20060378904 |
申请日期 |
2006.03.17 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN YI-CHOU;LUNG HSIANG-LAN;LIU RUICHEN |
分类号 |
H01L29/04;G11C16/02;H01L27/24;H01L29/00;H01L45/00 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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