| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an image sensor with improved efficiency in photon conversion of a photodiode. <P>SOLUTION: The image sensor 100 includes at least: a CMOS type photodiode 112 and a transistor 114 formed in a semiconductor layer 110 having a thickness of about 1-1.5μm; a dielectric layer 116 formed therein with electrical interconnection layers 122a, 122b electrically connected to each other and/or to the CMOS type photodiode and/or the transistor, and arranged in contact with a first surface of a semiconductor layer on the side opposite to a second surface of the semiconductor layer for the purpose of entering light received by the sensor from the outside; and a light reflecting means 122b arranged oppositely to the photodiode in the dielectric layer, and capable of reflecting at least part of the light received by the sensor toward the photodiode. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
