| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that suppresses irregularities in a quantity of incident light in each unit pixel without reducing resolution. <P>SOLUTION: The imaging device includes, on a semiconductor substrate, photo diodes 2 (hereinafter referred to as PD) arranged in the shape of a matrix (i, j), each diode converting light into a signal charge and accumulating it; charge transfer gates 3, each reading out the signal charge accumulated in the PD 2; floating diffusions 4a and 4b, each converting the signal charge, which is generated through photoelectric conversion by the PD 2 and read out through the charge transfer gate 3, into a voltage potential; and reset transistors 7 for resetting the signal charge and amplification transistors 5 for amplifying the read signal charge, these transistors 7 and 5 being shared by a plurality of PDs 2. Moreover, the reset transistor 7, which is arranged in a shared area between a first PD (i, j) and a second PD (i, j+1) that share the reset transistor 7 and the amplification transistor 5, is arranged between a third PD (i+1, j+n) and a fourth PD (i+1, j+n+1). <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
