MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, INFORMATION STORAGE DEVICE, AND MAGNETIC MEMORY

摘要

<P>PROBLEM TO BE SOLVED: To provide a magnetoresistive element that achieves higher recording density. Ž<P>SOLUTION: The magnetoresistive element includes: a reference layer 143c, which is formed of magnetic material containing Si or Ge added to CoFeAl, and of which an internal magnetization direction is fixed; a nonmagnetic layer 144 formed of nonmagnetic material on the reference layer 143c; and a free magnetization layer 145, which is formed of magnetic material containing Si or Ge added to CoFeAl on the nonmagnetic layer 144 and of which a magnetization direction changes in response to an external magnetic field direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž