发明名称 |
Organic thin film transistor and method for fabricating the same |
摘要 |
Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
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申请公布号 |
US2010065830(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090379856 |
申请日期 |
2009.03.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO HWAN;MOON HYUN SIK;YOO BYUNG WOOK;LEE SANG YOON;LEE BANG LIN;PARK JEONG II;JEONG EUN JEONG |
分类号 |
H01L51/30;H01L21/26;H01L51/40 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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