METHOD OF GROWING ZINC-OXIDE-BASED SEMICONDUCTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer.