| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to manufacture a capacitor which functions as a lower storage electrode using a porous anodic alumina structure. CONSTITUTION: A transistor including a gate electrode(13) and a landing plug contact(14) is formed on a substrate(11). A first insulation layer(15) including a via-contact which is connected to the landing plug contact is formed on the upper side of the transistor. A silicon layer(17) is grown to the upper side of the first insulation layer from the landing plug contact through the via-contact. A second insulation layer(19) is formed on the silicon layer and the first insulation layer. A porous anodic alumina structure(21) is formed on the silicon layer and the second insulation layer. A metal layer(23) is formed on the lower side of the alumina structure. A silicon nano-wire structure(25) is grown using the alumina structure and the metal layer.
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