发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A substrate processing apparatus is provided to prevent an exhausted gas to a gas exhaust unit from dispreading into a process chamber without installing a vacuum pump in the downstream of a bypass pipeline. CONSTITUTION: A substrate(200) is transferred into a process chamber(201). Gas supply units(150, 160, 170) supply a process gas from process gas sources(153, 163, 173) to the process chamber. A gas exhaust unit(231) exhausts the atmosphere of the process chamber. A vacuum is serially installed in the gas exhaust unit. A bypass pipeline connects the gas supply units and a gas exhaust unit without the interposition of the process chamber.
申请公布号 KR20100030601(A) 申请公布日期 2010.03.18
申请号 KR20090084962 申请日期 2009.09.09
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MARUBAYASHI TETSUYA;MORIYA ATSUSHI
分类号 H01L21/205 主分类号 H01L21/205
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