发明名称 FLASH MEMORY DEVICE AND METHOD FOR WRITING DATA THERETO
摘要 The invention provides a flash memory device. In one embodiment, the flash memory device is coupled to a host, and comprises a multiple-level-cell (MLC) flash memory and a controller. The MLC flash memory comprises a turbo area and a normal area, wherein the turbo area comprises a plurality of first blocks, the normal area comprises a plurality of second blocks, and each of the first blocks and the second blocks comprises a plurality of pages, wherein the pages of the first blocks and the second blocks are divided into strong pages with high data endurance and weak pages with low data endurance. The controller receives data to be written to the MLC flash memory from the host, determines whether the data is important data, and writes the data to the strong pages of the first blocks of the turbo area when the data is important data.
申请公布号 US2010070688(A1) 申请公布日期 2010.03.18
申请号 US20090548727 申请日期 2009.08.27
申请人 SILICON MOTION, INC. 发明人 LIN TSAI-CHENG
分类号 G06F12/00;G06F12/02 主分类号 G06F12/00
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