| 摘要 |
PROBLEM TO BE SOLVED: To suppress abnormal shape formation on a recess bottom when forming the recess by applying etching treatment onto an insulating membrane mainly including organosiloxane. SOLUTION: The method for manufacturing the semiconductor integrated circuit apparatus builds an embedded wiring structure by embedding a conductive membrane in the recess 4 such as groove, hole, or the like formed in the organic insulating membrane 2 mainly including organosiloxane and forming an interlayer insulating membrane. After a photoresist membrane 3 is formed on the organic insulating membrane 2, when the recess 4 such as groove, hole, or the like is formed in the organic insulating membrane 2 by utilizing the photoresist membrane 3 as an etching mask, the recess 4 is formed by applying plasma dry etching treatment utilizing CF-based gas/N<SB>2</SB>/Ar gas in order to suppress abnormal shape formation on the bottom of the recess 4. COPYRIGHT: (C)2010,JPO&INPIT
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