| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which eliminates the need for prebake in a process of forming a resist film and has high sensitivity, in particular, high sensitivity and good pattern forming properties to active energy rays having a maximum emission wavelength in the range of 400-410 nm from a semiconductor laser as an irradiation source. <P>SOLUTION: The positive resist composition includes (A) a vinylic polymer having a structural unit represented by general formula (I), (B) a photoacid generator represented by a specific structure, and (C) a sensitizing dye represented by a specific structure. <P>COPYRIGHT: (C)2010,JPO&INPIT |
