| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can obtain an index correlating with the degree of the progress of the deterioration of a solder junction. SOLUTION: A monitoring part 6 of which characteristics are changed in accordance with a temperature fluctuation range and a cycle number of a heat cycle applied to the semiconductor device is formed on a mounting substrate 2. When an aluminum film 6 for monitoring of which the purity is higher than 99.99% is adhered to the mounting substrate 2, the aluminum film 6 for monitoring is deformed like rippling in accordance with the temperature fluctuation range and the cycle number of the heat cycle applied to the junction, and a junction failure area ratio, a resistance value, a height of asperity or the like are changed. These values favorably correlate to the degree of the progress of the deterioration of the junction. The degree of the progress of the deterioration of the junction can be recognized accurately by measuring the junction failure area ratio, the resistance value, and the height of the asperity of the aluminum film 6 for monitoring. COPYRIGHT: (C)2010,JPO&INPIT |
