| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a breakdown voltage from decreasing in the semiconductor device having a plurality of trenches for retaining a breakdown voltage formed in the peripheral region. SOLUTION: The semiconductor device 100 includes: an n type semiconductor substrate 15 divided into a center region 18A and a peripheral region 18B surrounding the outside of the center region 18A; a p type body region 14 formed from the center region 18A to the peripheral region 18B; the plurality of termination trenches 12a-12c formed in the peripheral region 18B; a dividing trench 12d; and p type diffusion regions 6a-6d formed in a range surrounding the bottom of each trench. The termination trenches 12a-12c are disposed at an interval, where a depletion layer is connected in discontinuity of a circuit element. The interval between the termination trench 12c positioned at an outermost place and the dividing trench 12d is an interval, where the depletion layer is not connected in the discontinuity of the circuit element. COPYRIGHT: (C)2010,JPO&INPIT
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