发明名称 NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer and a second layer. The first layer contains a metal element and a first nonmetal element having a first valence (n). The second layer is arranged between the first layer and the storage layer and has a second valence (n+1), which is larger than the first valence (n) by 1.</p>
申请公布号 WO2010029645(A1) 申请公布日期 2010.03.18
申请号 WO2008JP66603 申请日期 2008.09.12
申请人 KABUSHIKI KAISHA TOSHIBA;ARAKI, TAKESHI;YAMAGUCHI, TAKESHI 发明人 ARAKI, TAKESHI;YAMAGUCHI, TAKESHI
分类号 H01L27/10;G11B9/04;H01L45/00;H01L49/00 主分类号 H01L27/10
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