发明名称 |
NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer and a second layer. The first layer contains a metal element and a first nonmetal element having a first valence (n). The second layer is arranged between the first layer and the storage layer and has a second valence (n+1), which is larger than the first valence (n) by 1.</p> |
申请公布号 |
WO2010029645(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
WO2008JP66603 |
申请日期 |
2008.09.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;ARAKI, TAKESHI;YAMAGUCHI, TAKESHI |
发明人 |
ARAKI, TAKESHI;YAMAGUCHI, TAKESHI |
分类号 |
H01L27/10;G11B9/04;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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