| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a bridge from generating between a gate and a landing plug by forming an element isolation layer in a bit line contact node part with an insulation layer including a superior wet property. CONSTITUTION: An element isolation layer(114) which is a first insulation layer(102) is formed on a semiconductor device. The element isolation layer defines an active region of the semiconductor device. A trench is formed between the edge parts of the active region. The trench is filled with a second insulation layer. The first insulation layer is high density plasma layer. The second insulation layer is spin on dielectric layer.
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