发明名称 |
Semiconductor Device Having a Field Effect Source/Drain Region |
摘要 |
A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device.
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申请公布号 |
US2010065894(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090622863 |
申请日期 |
2009.11.20 |
申请人 |
PARK KI-TAE;CHOI JUNG-DAL;ROH UK-JIN |
发明人 |
PARK KI-TAE;CHOI JUNG-DAL;ROH UK-JIN |
分类号 |
H01L27/105;H01L29/772;H01L29/792 |
主分类号 |
H01L27/105 |
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