发明名称
摘要 <p>A via hole is formed by a first step of forming an opening in a resin insulating film by laser radiation, a second step of forming an opening in said resin insulating film by dry etching and a third step of performing reverse sputtering in a plasma environment.</p>
申请公布号 JP4434809(B2) 申请公布日期 2010.03.17
申请号 JP20040096745 申请日期 2004.03.29
申请人 发明人
分类号 H01L23/52;H01L25/04;H01L21/28;H01L21/44;H01L21/56;H01L21/60;H01L21/768;H01L23/538;H01L25/18;H01L29/40 主分类号 H01L23/52
代理机构 代理人
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