发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a solar battery cell which removes heavy metal impurities generated in the manufacturing processes of the solar battery cell without increasing the manufacturing cost of the solar battery cell and can prevent a reduction in the lifetime of a silicon wafer. SOLUTION: The manufacturing method of a solar battery cell conducts at least a P-N junction forming process and an electrode forming process on a silicon wafer formed by slicing a silicon single crystal to manufacture the solar battery cell. A work strain 1a on the side of the surface of the sliced silicon wafer 2 is removed. After at least a P-N junction forming treatment is performed on the side of the surface of the wafer 2, a work strain 1b on the side of the rear of the wafer 2 is removed. A silicon single crystal which is formed by a CZ method and contains Ga as a dopant is desirably used as the silicon single crystal, and the removal of the work strain on the side of the surface is performed by a spin etching.</p>
申请公布号 JP4434455(B2) 申请公布日期 2010.03.17
申请号 JP20000260650 申请日期 2000.08.30
申请人 发明人
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利