发明名称 |
FinFET device with multiple fin structures |
摘要 |
A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.
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申请公布号 |
US7679134(B1) |
申请公布日期 |
2010.03.16 |
申请号 |
US20040754515 |
申请日期 |
2004.01.12 |
申请人 |
GLOBALFOUNDRIES |
发明人 |
BUYNOSKI MATTHEW S.;AN JUDY XILIN;WANG HAIHONG;YU BIN |
分类号 |
H01L29/94;H01L21/308;H01L21/3213;H01L21/336;H01L29/786 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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