METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

There is provided a metal line of a semiconductor device and a method for forming the metal line. In the method, a first metal line can be formed above a semiconductor substrate. An etch barrier layer can be formed on the first metal line. An interlayer insulating layer can be formed on the etch barrier layer and selectively removed to form a via hole and a trench. A portion of the interlayer insulating layer located in the via hole can be etched to expose the first metal line, and a plasma surface treatment can be performed on the interlayer insulating layer in which the via hole and the trench are formed and on the exposed first metal line by using an NH₃ plasma treatment. A metal diffusion barrier layer and a second metal line can then be formed in the trench and the via hole.