发明名称 Tantalum carbide nitride materials by vapor deposition processes
摘要 Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 &OHgr;/sq to about 1×106 &OHgr;/sq.
申请公布号 US7678298(B2) 申请公布日期 2010.03.16
申请号 US20070860952 申请日期 2007.09.25
申请人 APPLIED MATERIALS, INC. 发明人 SHAH KAVITA;YANG HAICHUN;CHU SCHUBERT S.
分类号 C23C16/00 主分类号 C23C16/00
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