发明名称 Semiconductor memory device for simultaneously performing read access and write access
摘要 Disclosed herein is a semiconductor memory device which can simultaneously perform a read access and a write access independently. The semiconductor memory device according to the present invention can access a plurality of data through the global sense amplifying unit and the global bit line, and enables the read controller and the write controller to independently control the global bit line and the bit line sense amplifying unit to be connected to each other to thereby perform the read access and the write access simultaneously.
申请公布号 US7679970(B2) 申请公布日期 2010.03.16
申请号 US20080059080 申请日期 2008.03.31
申请人 UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY 发明人 HONG SANG HOON
分类号 G11C7/10 主分类号 G11C7/10
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