NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to prevent depletion layer from being formed in memory cell operation by reducing the impurity doping concentration of a floating gate. CONSTITUTION: A non-volatile memory device comprises a cell region and a peripheral circuit region. A floating gate electrode of a cell region has an impurity doping concentration lower than the floating gate electrode of a peripheral circuit region. An inversion layer is formed in the interface of the tunnel insulation film(310) and floating gate electrode(320).