发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 PURPOSE: A positive resist composition containing a non-leaving hydroxyl group and a patterning process using the same are provided to improve resolution, pattern density dependency and mask fidelity. CONSTITUTION: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a compound capable of generating an acid in response to actinic light or radiation, wherein the resin component (A) is a polymer comprising non-leaving hydroxyl group-containing recurring units of at least one type selected from the general formulae (1-1) to (1-3), R1 is hydrogen, methyl or trifluoromethyl, X is a single bond or methylene, Y is hydroxyl or hydroxymethyl, and m is 0, 1 or 2.
申请公布号 KR20100029047(A) 申请公布日期 2010.03.15
申请号 KR20090083329 申请日期 2009.09.04
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;KINSHO TAKESHI;OHASHI MASAKI;HASEGAWA KOJI;IIO MASASHI
分类号 G03F7/039 主分类号 G03F7/039
代理机构 代理人
主权项
地址