VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A vertical channel type non-volatile memory device and a method for fabricating the same are provided to increase the density of a silicon nano crystal by storing a charge through a silicon nano crystal arranged in a string. CONSTITUTION: A vertical channel type non-volatile memory device comprises a nano crystal(350) for a plurality of gate electric conduction film(320), an interlayer insulation film(310), a plurality of pillars, a tunnel insulation film(360), a charge shielding layer(340), and a charge storage. A plurality of pillars are perpendicularly projected from the substrate. The tunnel insulation film surrounds the outer circumference of the pillar. The charge shielding layer surrounds the outer circumference of the pillar. The nano crystal for the charge storage is allowed in between the tunnel insulation film and the charge shielding layer.