发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANISISTOR AND DISPLAY DEVICE |
摘要 |
PURPOSE: A manufacturing method of a thin film transistor and a manufacturing method of a display device can produce small off current. In that way the thin film transistor in which S value smalls and the switching characteristic is good can be manufactured. CONSTITUTION: A manufacturing method of the thin film transistor comprises a step forming the back channel portion(102) in the thin film transistor etching is done by using resist mask, a step of removing resist mask the drug solution containing the hydrophilic group including the sulfur is used. The concentration of the sulfur existing in the back channel portion includes the step that the LLD this by the secondary ion mass spectroscopy it etches the superficial part it becomes. |
申请公布号 |
KR20100029038(A) |
申请公布日期 |
2010.03.15 |
申请号 |
KR20090082422 |
申请日期 |
2009.09.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SASAGAWA SHINYA;ISHIZUKA AKIHIRO;KOMORI SHIGEKI |
分类号 |
H01L29/786;H01L21/027 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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