| 摘要 |
The present invention relates to a thin film transistor and a fabrication method thereof, wherein a semiconductor of the thin film transistor is formed with a polycrystalline silicon layer that is crystallized by high heat generated from joule heating as a result of the application of an electric field to a gate electrode material, and the gate electrode material is connected with an amorphous silicon layer via a contact hole included in the thin film transistor so that arc generation can be prevented from possibly occurring during the crystallization, without introducing a separate mask for removing a preset region on a gate insulating film, thereby leading to the reduction of fabrication costs and simplified processing. A fabrication method of a thin film transistor according to the present invention comprises: providing a substrate; forming an amorphous silicon layer over the substrate; patterning the amorphous silicon layer; forming a gate insulating film over a front surface of the substrate; forming a first contact hole in the gate insulating film to expose a preset region of the amorphous silicon layer; depositing a gate electrode material over the gate insulating film having the first contact hole formed therein; applying an electric field to the gate electrode material to crystallize the patterned amorphous silicon layer by joule heating; patterning the gate electrode material to form a gate electrode; forming an interlayer insulating film over a front surface of the substrate where the gate electrode is formed; forming a second contact hole in the interlayer insulating film so as to expose a preset region of the amorphous silicon layer being exposed by the first contact hole; and forming source and drain electrodes electrically connected to source and drain regions of the semiconductor layer, respectively, through the first contact hole and the second contact hole. |
