| 摘要 |
<p>An exposure method includes measuring coordinates of alignment marks before and after exposing a first wafer to determine a fluctuation amount pi of a parameter of the alignment (Steps 201, 204, 205); measuring coordinates of alignment marks before exposing a second wafer to determine a parameter pi of the alignment (Step 207); and aligning and exposing the second wafer (Step 209) based on a parameter pi' obtained by correcting the parameter pi with the fluctuation amount pi determined for the first wafer (Step 208). A high overlay accuracy can be obtained even when the alignment information is gradually changed, for example, due to the linear expansion and contraction of the substrate during the exposure of the substrate.</p> |
