| 摘要 |
<p>A nonvolatile storage element is provided with a conductive first layer, a conductive second layer, and a recording layer arranged between the first layer and the second layer for recording information by reversibly transiting between a high resistance state and a low resistance state. At least the first layer or the second layer is composed of at least a metal oxide or a metal nitride or a metal carbide, and contains a first noble metal.</p> |
