| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor device capable of forming a diaphragm structure without performing any etching using an alkali solution and realizing microfabrication, and a method of manufacturing the semiconductor sensor device. Ž<P>SOLUTION: A LOCOS oxide film 3 is formed on a silicon substrate 1, and furthermore a gate-metal interlayer film 5 is formed thereon. There is formed a frame-like member 9 which consists of a material with a larger etching selection ratio compared with the LOCOS oxide film 3 from a top face of the gate-metal interlayer film 5 to the silicon substrate 1. There is formed an opening 25 with a planer size smaller than the frame-like member 9 in the gate-metal interlayer film 5 located inside the frame-like member 9 and insulating films 17, 23 thereon. The LOCOS oxide film 3 located inside the frame-like member 9 is removed, and a cave 9 is formed. The cave 9 communicates with the opening 25. There is provided a detection unit 11 on a lower surface of the gate-metal interlayer film 5 located inside the frame-like member 9. A part of the detection unit 11 is exposed to the opening 25. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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