发明名称 |
LIGHT EMITTING DIODE HAVING BARRIER LAYER OF SUPERLATTICE STRUCTURE |
摘要 |
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
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申请公布号 |
US2010059735(A1) |
申请公布日期 |
2010.03.11 |
申请号 |
US20070517314 |
申请日期 |
2007.11.21 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
LEE SANG JOON;OH DUCK HWAN;KIM KYUNG HAE;HAN CHANG SEOK |
分类号 |
H01L33/00;H01L33/06;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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