| 摘要 |
1,143,907. Diffusion source. MARCONI CO. Ltd. 31 Jan., 1968 [10 July, 1967], No. 31683/67. Heading H1K. A dopant source for use in a diffusion process consists of a low resistivity silicon wafer having a surface layer of oxide substantially saturated with dopant atoms. Such a source may be made by heating an oxide covered wafer in boron tribromide vapour or phosphorus oxychloride vapour for a prolonged period. It is used by heating it in close proximity to a heated wafer to be doped (e.g. silicon), if desired in a flow of inert gas. The source may be used many times while still giving the same dopant concentration at the recipient wafers. |
