<p>Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The ligth emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.</p>
申请公布号
WO2010027649(A1)
申请公布日期
2010.03.11
申请号
WO2009US54145
申请日期
2009.08.18
申请人
3M INNOVATIVE PROPERTIES COMPANY;LEATHERDALE, CATHERINE, A.;HAASE, MICHAEL, A.;BALLEN, TODD, A.
发明人
LEATHERDALE, CATHERINE, A.;HAASE, MICHAEL, A.;BALLEN, TODD, A.