发明名称 MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO
摘要 <p>Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The ligth emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.</p>
申请公布号 WO2010027649(A1) 申请公布日期 2010.03.11
申请号 WO2009US54145 申请日期 2009.08.18
申请人 3M INNOVATIVE PROPERTIES COMPANY;LEATHERDALE, CATHERINE, A.;HAASE, MICHAEL, A.;BALLEN, TODD, A. 发明人 LEATHERDALE, CATHERINE, A.;HAASE, MICHAEL, A.;BALLEN, TODD, A.
分类号 H01L33/20;H01L33/10;H01L33/50 主分类号 H01L33/20
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