| 摘要 |
A solid-state imaging device 1 includes a photoelectric conversion section 17 and a writing transistor 18. The photoelectric conversion section 17 is provided in a semiconductor substrate. The writing transistor 18 has a floating gate 16 and a control gate 15. The floating gate 16 is provided above the semiconductor substrate. The control gate 15 injects electric charges generated in the photoelectric conversion section 17 into the floating gate 16. The control gate 15 is provided in a position that does not overlap with the photoelectric conversion section 17 in plan view, and is provided so as to be brought into contact with all sides of the peripheral edge of the photoelectric conversion section 17.
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