| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a discrete type bipolar transistor that avoids a defect in fixation due to a step of the thickness of an insulating film of a two-layer electrode structure. <P>SOLUTION: An emitter contact hole CH2 and an emitter through hole TH2 provided above and below an emitter electrode 7 of a first layer are made not to overlap each other, and a plurality of contact holes CH2 and emitter through holes TH2 are arranged apart from each other for one emitter electrode 7. Consequently, only an influence of steps of the emitter through holes TH2 provided in an insulating film having a thick film thickness is exerted at a maximum on a surface of an emitter electrode 17 of a second layer, and flatness of the electrode surface of the second layer is improved. Consequently, the defect in fixation of a metal plate is improved. <P>COPYRIGHT: (C)2010,JPO&INPIT |
