| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accelerate a write operation for a nonvolatile memory cell. <P>SOLUTION: A semiconductor integrated circuit includes a plurality of nonvolatile memory cells being electrically erasable and writable, and the circuit includes a control means for giving pulse state voltage to the nonvolatile memory cell until threshold voltage of the nonvolatile memory cell having first threshold voltage is changed to the second threshold voltage. At the time, the control means controls the second threshold voltage to be voltage in a range being lower than power source voltage and half of power source voltage or more. Thus, the semiconductor integrated circuit can have only coarse write as a write mode. The coarse write mode is required for fewer pulses to change the threshhold voltage of the memory cell, thereby accelerating the write operation. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
