发明名称 CAP METAL FORMING METHOD
摘要 A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. A method for forming a cap metal on a processing surface of a substrate provided with two or more regions having different water-repellent properties, includes: holding the substrate horizontally by a rotatable holding mechanism installed in an inner chamber; supplying a gas between the inner chamber and an outer chamber covering the inner chamber via a gas supply hole provided in a top surface of the outer chamber; forming a pressure gradient between the inner chamber and the outer chamber; and supplying a plating solution to a preset position on the processing surface of the substrate after a pressure of the gas inside the inner chamber reaches a preset value so as to form the cap metal on at least one of the regions.
申请公布号 US2010062159(A1) 申请公布日期 2010.03.11
申请号 US20090405468 申请日期 2009.03.17
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA TAKASHI;SAITO YUSUKE;IWASHITA MITSUAKI
分类号 B05D3/04 主分类号 B05D3/04
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