APPARATUS AND METHOD FOR PROCESSING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To achieve ashing in a resist even when ion implantation of any density is applied to the resist. SOLUTION: A wafer coated with a resist is irradiated with ultraviolet light in a chamber 7. The wafer is brought into contact with ozone gas in a chamber 5 to ash the wafer. The wafer is brought into contact with semiconductor gas corresponding to a resist component in a chamber 6. The wafer irradiated with the ultraviolet light is brought into contact with ozone gas in the chamber 7. COPYRIGHT: (C)2010,JPO&INPIT