| 摘要 |
PURPOSE: A method for forming salicide using a pulsed laser deposition and a pulsed laser deposition apparatus for the same are provided to reduce contaminants including particles by omitting a barrier metal deposition process and a removing process. CONSTITUTION: A gate electrode, a spacer and a source/drain region are formed on a semiconductor substrate(S20). The contact hole of the gate electrode, the spacer and the source/drain is formed by a photographic process and an etching process(S21). A pre-amorphization-implant is enforced within the contact hole(S22). A wet-cleaning is enforced in order to remove natural oxide(S23). A thin film for forming salicide using a pulsed laser deposition(S24). The salicide is formed by laser annealing(S25).
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