| 摘要 |
To use a resistance change element having an MIM structure, which is obtained by stacking a metal, a metal oxide, and a metal, as a switching element, it is necessary to achieve OFF resistance higher than that required in a memory element by a factor of at least 1000. On the other hand, when a resistance change element is used as a memory element and when the difference between the ON resistance and the OFF resistance is a large value, high performance, for example, a short readout time, can be achieved. The present invention therefore provides a resistance change element capable of maintaining low ON resistance and achieving high OFF resistance. High OFF resistance can be achieved while low ON resistance is maintained by adding a second metal that is not contained in a metal oxide, which is a resistance change material, the second metal being capable of charge-compensating for metal deficiency or oxygen deficiency.
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